DelfMEMS will enable the wireless industry to provide a higher level of RF integration while decreasing the cost and the size of the solutions.

We are developing a new generation of tunable RF components based on MEMS technology. The combination of DelfMEMS patented structures and DelfMEMS cost-effective fabrication process has generated innovative RF-MEMS tunable components named DimSYS (DelfMEMS Innovative Membrane SYStems).

Utilizing the Company’s patented technology, DelfMEMS is developing revolutionary cost-effective, and low power tunable wireless solutions enabling the integration of reconfigurable RF front-ends, more and more required in the handset market. Our partners will be the Semiconductors, PA Modules, and FEMs manufacturers, as well as the handset OEMs.

DelfMEMS RF-MEMS tunable products will address the smart antennas, PAs and filter banks modules. The very low current consumption and the small size of our solutions are very attractive to handset manufacturers dealing with the challenging requirements for smart antennas, power amplifiers and filter banks required for the demanding multi-mode and multi-standards new generation of cell phones, in addition to “current hungry” functions like Camera, TV, Bluetooth and more.

Microelectromechanical Systems (MEMS) is the technology of the very small, and merges at the nanoscale into "Nanoelectromechanical" Systems (NEMS) and Nanotechnology. Due to the fact that MEMS devices are manufactured using batch fabrication techniques similar to those used for semiconductors, high level of integrations can be achieved by integrating the RF-MEMS functions on top of RF processes like CMOS, SiGe, and GaAs. The maturity of those processes will allow high yield and reliability while offering very high level of integration and performances at a very low cost and small size. Extremely attractive process for SoC solutions DelfMEMS innovations consist in a new MEMS structure based on an electrostatic totally free flexible membrane (2 patents).

The advantages are:

• high out-of-plane deflections,
• very low actuation voltages,
• no power consumption,
• independence on temperature scale [-50, 200]°C,
• independence on substrate curvature,
• very low induced stress level